Today Atomera added five new papers to our website showing, in more detail, how MST improves performance in semiconductors.  Each of the papers was written in conjunction with a leading expert in the field and peer reviewed before publication by the IEEE or the AIP.  The papers examine MST’s effects on SRAMs, FinFets, shallow junctions and […]

Read More »

At December’s IEEE IEDM conference in San Francisco, Atomera held a very well attended event to discuss semiconductor variability and how to mitigate it.  Three speakers gave very interesting talks including: Mitigation of Intrinsic Vt Variation using Oxygen Inserted (OI) Silicon Channel by Professor Suman Data – Frank M. Freimann Chair of Engineering at the University […]

Read More »

  In its pure state, silicon is a dull grey crystalline material and a poor conductor of electric current. Yet, with the addition of small quantities of certain impurity atoms, also referred to as electrical dopants, it can be transformed into a plethora of electronic devices, making silicon the foundation of the $350B semiconductor industry. […]

Read More »

Startup Atomera has had a rough ride since coming public last year, but its novel technology to improve semiconductors bears watching. By inserting a film of oxygen atoms in chips during manufacturing, the company promises to improve performance and reduce energy consumption of chips without the tremendous cost needed to move parts to the latest […]

Read More »

Welcome to Atomera’s new Blog. We hope to use this forum to provide insight into our company and our connection to some of the biggest developments in the semiconductor industry. To kick it off, we will explore in more detail how Mears Silicon Technology, or MST, fits the with the larger trend of the slowdown […]

Read More »