Atomera’s technology helps to advance Moore’s law through material innovation as opposed to the more traditional path of geometric or line width reduction, and we believe this is critical to the future of the industry.  We are always gratified to see support for this strategy through news of other companies’ creative material innovations as well. […]

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Better matching with MST     Last year I wrote about one of the unique attributes of the MST® technology in the design and implementation of semiconductor doping profiles. MST can facilitate “precision doping profiles” which are “frozen” or “anchored” in place and do not smear out after subsequent oxidations and anneals. It does this […]

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February 5, 2020   Access the Presentations that Were Shared of MST’s Smart Profile Breakthrough Revealed   Learn recent technological breakthroughs for significant performance improvement in different semiconductor application areas.. Gain insights from Atomera’s process development experts on using Atomera’s MST technology as a flexible tool to solve many of the challenges faced by today’s semiconductor manufacturers. […]

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  Details of MST’s Smart Profile Breakthrough Revealed   SAN FRANCISCO, December 5, 2019 – IEDM Conference 2019 – Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and licensing company focused on deploying its proprietary technology into the semiconductor industry, will be holding a seminar on ‘MST®: Smart Profile Breakthrough’ at the 65th IEEE International Electron Devices Meeting […]

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MST Boosts RF-SOI Capabilities to Solve Key 5G Challenges By Robert Mears, Atomera Founder and CTO   Not very long ago, in 2G and 3G smart phones, the main application of an RF switch was to make efficient use of components for switching between simple transmit and receive functions. Much more is being asked of […]

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Atomera MST® SP Demonstrates 50% Improvement in Key Industry Metric   LOS GATOS, Calif., May 1, 2019 – Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and licensing company focused on deploying its proprietary technology into the semiconductor industry, today announced MST SP, a new technique capable of delivering a performance improvement of up to 50% […]

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In my previous blog post, I highlighted one of the benefits of MST® for engineering channel doping profiles. In that application, the goal was to keep dopants away from the surface region where (inversion) on-state conduction occurs while maintaining higher doping below that to maintain control of the channel conduction and reduce off-state leakage.   […]

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One of the unique attributes of Atomera’s MST® technology is that it provides a new degree of freedom in the design and implementation of semiconductor doping profiles. In planar CMOS devices, a vertical well profile is typically engineered by one or more implants, which then broaden under diffusion processes during subsequent oxidations and other thermal […]

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SAN FRANCISCO, November 30, 2018 – IEDM Conference 2018 – Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and intellectual property licensing company focused on deploying its proprietary technology into the semiconductor industry, will be holding a seminar on ‘MST: More than Mobility,’ at the 64th IEEE International Electron Devices Meeting in San Francisco.   Join Atomera and […]

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Highlights: STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, has executed an integration license for Atomera’s Mears Silicon Technology™ (MST) as a continuation of their R&D phase. The phased license agreement provides rights for STMicroelectronics to integrate Atomera MST with their in-house technology. LOS GATOS, Calif., Oct. 02, 2018 — Atomera Incorporated (NASDAQ: ATOM), […]

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