In my previous blog post, I highlighted one of the benefits of MST® for engineering channel doping profiles. In that application, the goal was to keep dopants away from the surface region where (inversion) on-state conduction occurs while maintaining higher doping below that to maintain control of the channel conduction and reduce off-state leakage.   […]

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One of the unique attributes of Atomera’s MST® technology is that it provides a new degree of freedom in the design and implementation of semiconductor doping profiles. In planar CMOS devices, a vertical well profile is typically engineered by one or more implants, which then broaden under diffusion processes during subsequent oxidations and other thermal […]

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SAN FRANCISCO, November 30, 2018 – IEDM Conference 2018 – Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and intellectual property licensing company focused on deploying its proprietary technology into the semiconductor industry, will be holding a seminar on ‘MST: More than Mobility,’ at the 64th IEEE International Electron Devices Meeting in San Francisco.   Join Atomera and […]

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Highlights: STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, has executed an integration license for Atomera’s Mears Silicon Technology™ (MST) as a continuation of their R&D phase. The phased license agreement provides rights for STMicroelectronics to integrate Atomera MST with their in-house technology. LOS GATOS, Calif., Oct. 02, 2018 — Atomera Incorporated (NASDAQ: ATOM), […]

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 Highlights: Asahi Kasei Microdevices, a Japanese semiconductor manufacturer of high-end specialty integrated circuits (ICs) and sensor products, has licensed Atomera’s Mears Silicon Technology™ (MST). This agreement represents the first license revenue for Atomera and the beginning of our commercial license business. Access to Atomera’s silicon enhancement Intellectual Property (IP) provides AKM with technology to address […]

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Great article in the Financial Times, “The US chip industry starts to wake up to new competitive reality” about why new material solutions, like Atomera’s MST, are needed in the semiconductor industry. DARPA has decided to help find solutions by dedicating $1.5B to funding investigations into new chip architectures, materials, and design techniques.  The article […]

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News Highlights Researchers at Notre Dame University find 2.7x lower gate leakage and 23% improvement in mobility. Company confirms recent data on its Q=quantum engineered material Atomera’s MST is currently being evaluated by foundries and integrated device manufacturers.   LOS GATOS, Calif., July 23, 2018 – Atomera (NASDAQ: ATOM), a semiconductor materials and intellectual property […]

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Today Atomera added five new papers to our website showing, in more detail, how MST improves performance in semiconductors.  Each of the papers was written in conjunction with a leading expert in the field and peer reviewed before publication by the IEEE or the AIP.  The papers examine MST’s effects on SRAMs, FinFets, shallow junctions and […]

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At December’s IEEE IEDM conference in San Francisco, Atomera held a very well attended event to discuss semiconductor variability and how to mitigate it.  Three speakers gave very interesting talks including: Mitigation of Intrinsic Vt Variation using Oxygen Inserted (OI) Silicon Channel by Professor Suman Data – Frank M. Freimann Chair of Engineering at the University […]

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  In its pure state, silicon is a dull grey crystalline material and a poor conductor of electric current. Yet, with the addition of small quantities of certain impurity atoms, also referred to as electrical dopants, it can be transformed into a plethora of electronic devices, making silicon the foundation of the $350B semiconductor industry. […]

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